I'm trying to achieve reverse polarity protection for the TPL7404LADR chip which is basically an updated version of the ULN2003 darling transistor array. To do this I want to use a P Channel MOSFET but I'm worried about the effects this will have for fly back current protection. If an inductive load (say a solenoid) is switched from ON to OFF will the P Channel MOSFET effectively allow the chip's internal free-wheeling diode to carry the fly back current through to the +24V source?
Thanks
Best Answer
To be completely safe you could pick a MOSFET that can handle the load (solenoid) currents, then the free wheeling diodes will be connected across the loads.
Aside from the effect of the inductance under pathological conditions, reversing the power will energize the solenoid through the body diode of the NMOS transistors. Maybe I missed it, but I don't see a specification for the maximum reverse current through an output (the 0.3V negative voltage will be exceeded). Since the voltage drop of the body diode is considerably higher than the NMOS MOSFET when on, most likely, the current handling capability may be considerably less in the reverse direction.