Electronic – Doping concentration in anode region

diodesvoltage

I'm stuck with this doping problem and can't figure out where to go with it.

The built-in voltage of a GaAs pn junction diode is 1.25 V when the diode's temperature is T = 320K. The cathode region of the diode is doped with phosphorus at a concentration of 1e17 \$cm^{-3}\$. Determine the required doping concentration in the anode region.

Would I go about this by using the equation \$V_{bi} = V_T\cdot ln(N_a\cdot\frac{N_d}{n_i^2})\$?

\$V_T\$ being the thermal voltage
\$N_a\$ being the acceptor concentration on p side
\$N_d\$ being the donor concentration on the n side
\$n_i\$ being the intrinsic carrier concentration

I have completed the following work for the above question.
Can I be checked for accuracy please!

enter image description here

Best Answer

That is the correct formulae for an abrupt junction, just be sure to use the right temperature for the thermal voltage \$ V_T=\dfrac{KT}{q_e}\$ and the right intrinsic carrier concentration \$n_i\$ at that temperature.

Related Topic