Electronic – High current Synchronous Buck Converter, MOSFET or IGBT

buckigbtmosfetsynchronous

I am supposed to design a synchronous buck converter (to be driven by micro controller control signals for switching purpose). The input Voltage range is 10V-15V, and output voltage range is 4V-5V but with high current i.e around 200 A (supposing i have a power supply capable of providing me such high current). Also efficiency of this buck converter is not an issue in my case (it can be low). Whereas the purpose of buck converter design is to route power in both directions (from i/p to o/p (buck) and from o/p to i/p (boost)).

I have read online that it is better to use transistor package modules instead of using discrete transistors and diodes. I also went through MOSFETs, BJTs and IGBTs.

For handling a high current at the output of my synchronous buck converter, i need the switching device (MOSFET, BJT or IGBT) to be of that currnet rating. Now what i have found so far is that MOSFETs (or MOSFET/buck modules with MOSFETs) with such high current ratings are not available. For eg Which led me to search on IGBT modules, which are available for high current ratings. for eg This Link gives a number of different IGBT modules which are available.

Now my question is, that am i right assuming the fact that i cannot find such MOSFET modules with high current ratings and i will have to look for IGBT modules ? If i am, then what kind of IGBT module would be suitable for me to design a synchronous buck converter ? While going through These different modules, i found This type to be the most appropriate, looking at its transistors arrangement inside the module. If i am right, would i be able to design a synchronous buck converter (capable of both current polarities) using one of these module ?

And if i am wrong, can anyone recommend me MOSFET modules for buck converters with such high current ratings, because i couldn't find one.

Thankyou.

Best Answer

IGBTs have high voltage drop and are not suitable for low voltage switching. They only exist because reliable high current high voltage MOSFETs are hard to make.

You should use high current MOSFETs rated at 30~40V. Maximum current is often package limited, but several FETs can be wired in parallel to increase current handling. For example the IRFP7430PbF is rated at 404A, but package limited to 195A. Rdson is 1.3 milliohms, so two in parallel should drop 0.13V at 200A (= 13W per FET). In comparison an IGBT module could drop 2V or higher, resulting in 400+ Watts of heat to get rid of!

The advantage of a module is less wiring and simpler installation. One disadvantage is that it's toast if even one transistor dies. Also an IGBT module may be much more expensive than a few discrete FETs.