Electrical – Bipolar Transistor Inverter Circuit Analysis

What happens is:

As the base voltage rises, the transistor begins to turn on and it's collector voltage drops (assuming it has a collector resistor or similar current limiting element)

Normally a typical bipolar transistors saturation voltage is around 200mV or less. When the collector voltage, Vce drops below Vbe - Vschottky though, the schottky starts to conduct (now being forward biased) and the base current starts to flow through it into the collector. This "steals" current from the base, preventing the transistor turning on more and the collector reaching it's saturation voltage.
The system will reach a state of equilibrium, since the transistor can't turn on any more without it's base current dropping (you could see it as a form of negative feedback) and will settle just around Vbe-Vschotkky (e.g.~700mv-450mV as opposed to ~200mV)

So, to clarify things, the formula for Vce is:

Vce = Vbe - Vschottky

If we have this circuit and apply a ramped voltage from 0-2V:

We get simulation results like this:

Note that when Vcollector drops below ~700mV, the Schottky begins to conduct and the collector voltage levels out at around 650mV.

If we remove the Schottky, then:

We can see the collector drops all the way to 89mV (I used the cursor as it's hard to see from the graph)

If you wish to avoid holy wars you'll need to avoid making simplistic and incomplete statements :-).

Bipolar transistors are current driven.

MOSFETs are voltage driven.

In both cases the spread of parameters during manufacturing is such that a circuit will almost always rely on feedback to produce a given voltage or current gain.

MOSFETs tend to be slightly more costly at the very bottom end for "jelly bean" applications. But, for switching more than a few ~100mA, MOSFETs are usually as cheap or cheaper than functionally equivalent transistors, are easier to drive from a uC (microcontroller) as a digital switch than bipolar transistors and tend to have very significantly superior on characteristics.

An "on" bipolar transistor exhibits a saturation voltage. This can be several tenths of a volt and to get it much under 0.1V usually requires a high base to collector current ratio that is undesirably high. At 1 A a 0.1 \$V_{sat}\$ (saturation voltage) dissipates 0.1 W and is the equivalent of a R = V/I = 0.1/1 = 100 \$m\Omega\$ transistor. But at 10A the figures are 1 Watt dissipation and 10 \$m\Omega\$. The 0.1V is very difficult to achieve at higher current levels.

The \$R_{DSon}\$ (Drain-Source on resistance) of MOSFETs is typically under 0.1 \$\Omega\$ and you can get devices with 10 \$m\Omega\$ or even sub 1 \$m\Omega\$.

As switching speeds rise MOSFETs need a gate driver to charge and discharge the gate capacitance. These can be relatively cheap.

More soon ....