Electrical – MOSFET turn off time way too long, why

mosfetpowermosfet

I would like to ask what is causing the following phenomenon. I've spotted this on my real buck converter at a low duty cycle first, then tried in my SPICE simulation as well which confirmed this.

Let's have a following simple buck converter:
Buck converter simulation schematic

I've set V2 to 50kHz and 1% duty cycle. The FET on time should be 200ns at this point. But the transient analysis shows this:

Transient analysis

Voltage pulse at V2 really takes 200 ns but voltage Q1-D roughly 600ns!
Interesting is that the voltage Q1-D rises almost instantly at turn-on but takes a long delay at turn-off.

Datasheet for given FET says:

  • tdon 22ns
  • tr 99ns
  • tdoff 110ns
  • tf 92ns

These are for slightly different test conditions but that should not be the matter here. At least not the reason for such a long turn-off time. For these times I would expect the Q1-D pulse to last ca 300ns instead of 600ns.

Is there some additional restriction about switching MOSFETs on for a very short time?

Note: This simulation has been done in Simplis Elements 8.1. In real application I use a different MOSFET even with shorter datasheet times but the off-delay is even longer.

Best Answer

As a check, remove C1, D1, and L1, and connect Q1.S directly to R2 so that Q1 drives a purely resistive load (R2). Now run your simulation and probe Q1's gate current.

You'll notice when voltage source V2 shuts off (transitions from +15V to 0V), the accumulated charge on Q1's gate discharges as current through R9, and Q1 remains ON until the gate charge level exits the Miller plateau, at which point the transistor goes into cutoff.

And of course, increasing R9's value slows down the discharge of Q1's gate, which causes Q1 to stay on longer after V2 transitions from +15V to 0V.

So what's the solution? To expedite the discharge of Q1's gate and thereby turn off Q1 sooner, try this. Replace voltage source V2 with a piece-wise linear voltage source (VPWL) and configure its time versus voltage values as follows:

time    voltage
 0s        0V
 50us      0V
 +5ns      15V
 50.2us    15V
 +10ns     -15V
 +40ns     -15V
 +5ns      0V

At t=50us, V2's voltage transitions from 0V to +15V, which turns on Q1. At t=50.2us, V2's voltage transitions from +15V to -15V, and V2's voltage remains at -15V for 40 ns, after which time V2's voltage rises from -15V back to zero volts. This -15V 40ns pulse expedites the discharge of Q1's gate (reduces the Miller plateau transition time), and Q1 shuts off much sooner.

HINT: Research MOSFET & IGBT gate driver ICs.