Electronic – A confusion about the formula for transistor Vbe Ic characterisitcs

bjtcurrentsaturation

Below is NPN BJT transistor Vbe Ic characteristics and the formula:

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Many texts approximate this equation as:

Ic = Is*e^(Vbe/Ut)

and following this they say when Vbe=0, Ic becomes equal to Is.

But in real the equation is:

Ic = Is*(e^(Vbe/Ut) – 1)

And in this case when Vbe is set to zero Ic becomes zero.

So what is Is? Is it the Ic current when Vbe is set to zero volts? If so, why the real formula cannot predict it correctly? What really happens when Vbe is set to zero in a laboratory?

Best Answer

The approximation is good enough because \$V_{be}\$ is a lot greater than \$V_t\$ (thermal voltage at a room temperature of \$27^o\$C).

\$V_t\approx 26\text{mV}\$ at \$27^o\$C.

Even for a value very close to zero, the approximation works well because the exponential term grows much larger than 1.

Say \$V_{be}=100\text{mV}\$ (which is very close to zero), the exponential term becomes, \$e^{\frac{V_{be}}{V_t}}=46.81\$. This makes the 1 negligible because you could say 46.81 >> 1. Would it make much of a difference 46.81 (approx) vs 45.81(actual)? what is \$V_{be}\$ were 120mV? 101(approx) vs 100(actual)? If you're trying this in a lab, chances are that \$V_{be}\$ won't be exactly zero.

Obviously, the original equation, \$I_c=I_s(e^{\frac{V_{be}}{V_t}}-1)\$ will always work and will give you the exact result (If \$V_{be}\$ were exactly zero, this is the one you want to use because the exponential term no longer dominates).

The approximation is valid when \$V_{be}\$ is such that the exponential term dominates, which is the case even for even a minuscule value of \$V_{be}\$, i.e 75mV.