Electronic – basic p-type mosfet circuit, breaks mosfet

circuit-designmosfetp-channel

So I've made this basic circuit to drive Vout between ~0V and ~1.65V.
The default state should be ~0V, hence I use a p-type mosfet:
https://docs.rs-online.com/d95a/0900766b800ae907.pdf

Now, for some reason it looks like the fet has broken down after applying a voltage to the gate the first time by closing the switch (s1). I'm having quite a hard time in fet-based circuit design so maybe somebody could help me a bit in what I'm doing wrong or how I'm mis-understanding the situation?

The source is driven by a 5V supply. R1 = 20k, R2 and R3 are 10k.
Q1 is an FDV304P P-channel mosfet as given in the link above.

The circuit:
the schematics of my circuit

The purpose of this circuit is to drive an IC's enable pin. By default this enable should be turned low but when the switch is closed, the enable should be high. The switch simulates a IO pin from another IC.

Best Answer

As @"Math Keeps Me Busy" says you can do this without a mosfet, but if you would like to use one you can do it like this:

schematic

simulate this circuit – Schematic created using CircuitLab

The first one uses a P-mosfet. Changes from yours that I have made:

  • turn around S/D terminals (having recently made the same mistake myself, I like showing the body diode so I can tell whether I've gotten it the right way around!)
  • Use it as a high-side switch. It passes, or not, the high rail. R3 keep Q1 turned off by pulling up the gate to the high rail
  • SW1 turns on Q1 by pulling the gate down relative to the source terminal (high rail).
  • In this schematic and yours, the gate is pulled all the way down to 0V, which means Vgs = -5V; this is within the specs of this FET but if you were using a higher voltage BAT1 you could increase R4 in order to control how low you pull the gate.

The second one uses an N-MOSFET as a low-side switch. It will invert the output (Vout* will be 1.66V when SW3 is open, and 0V when SW3 is closed)