What is the difference between the threshold voltage (Vth) and gate-emitter voltage (Vge) for IGBT devices?
How can I calculate Vth of an IGBT chip?
Electronic – Difference between Vth and Vge
igbtmosfetpower electronicssemiconductorssolid-state-devices
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Sometimes...
Assuming the point of interest is power MOSFETS and not small signal MOSFETS and silicon (as oppose to SiC, GaN)
The first characteristic to check is the output voltage. For power devices they should be 0V to 12-15V (acpl-312T) to cater for gate thresholds around 4V (as well as being able to drive to -15V if miller turn-on is a concern). As such a MOSFET driver driving an IGBT & equally an IGBT driver driving a MOSFET should be fine.
The next characteristic is peak current. IGBT's will have significantly larger gate capacitance and as such will require higher peak currents to ensure the device saturates as quick as possible. The converse of this is MOSFET's can be switched faster and as such the rms current demand to drive a MOSFET might be higher.
Higher current or higher switching frequency affects the driver power capability.
To measure the voltage at the junction without the lead voltage drop.
This is used so that the gate voltage can better be controlled.
Since IGB can have pretty high current, even a small lead resistance can cause significant voltage drop, you can make sure to drive the IGBT at its maximum switching capacity, without the risk of destroying it by having a voltage on that gate that is too high.
They are called Kelvin point, like on this device: datasheet.
Best Answer
The gate-emitter voltage is just that, the voltage that happens to be across the gate to emitter terminals.
The threshold voltage is that gate-emitter voltage where the device starts to conduct, where "starts" is usually defined as some minimum collector current at some applied voltage. The datasheet should define what criteria exactly are used to define "starts to conduct".