It is my understanding that a highly doped, thin depletion region, reverse-biased P-N junction at low voltage can cause quantum mechanical tunneling. This (or sometimes avalanche breakdown) is used in some hardware random number generators. However, is the noise created in the junction truly quantum mechanically random, or is it chaotic but deterministic?
- Reverse voltage PN junction (how it works?)
- Electronic – Is the avalanche noise “random?”
- Electronic – Why can current flow through the reverse biased base-collector junction (N-P junction) in a BJT with a forward biased base-emitter junction
- Electronic – Why avalanche breakdown in a PN junctions is said to be caused by minority carriers
- Electrical – current of forward-biased pn junction
- Electronic – Can a reverse biased diode be driven past its voltage rating but with current limited to few uA
- Electronic – Is the current in reverse biased PN junction due to drift or diffusion