Electronic – H-bridge tiny spike

Flogging the FREDs

Voltage fed converters with transformer isolation will exhibit ringing in the secondary. Ringing is caused by parasitic inductances and capacitances in the circuit, with the dominant elements will being the transformer leakage inductance (\$ L_ {\text {Lk}}\$) and junction capacitance ( \$ C_j\$)of the bridge diodes. The diode data sheet shows \$ C_j\$ of 32pF. I'm going to make a naive guess at \$ L_ {\text {Lk}}\$ of 500nH, but it will have to be measured to really know. So, an LC of 500nH and 32pF is what must be snubbed.

Spike amplitude without snubbing will be \$ 2 n V_ {\text {in}}\$, where \$ n \$ is transformer turns ratio and the factor of 2 is what you get for a high Q resonance.

There are different types of voltage snubbers; Clamping, Energy transfer resonant, and Dissipative. The clamping and resonant types require more parts and some involvement of active switches which I think make them impractical for this case. So, I am only going to cover dissipative snubbers because they are the most simple and work well with passive switches (like diodes or synchronous rectifiers).

The form of dissipative snubber that I will cover is a series RC placed in parallel with each bridge diode.

Some facts about RC dampening snubbers:

• They are all about impedance matching. You don't get to choose the snubber resistor value \$ R_d\$. The parasitic LC determines that for you by characteristic impedance Zo.
• You do get to choose the value of the snubber cap \$ C_d\$. That's important since the cap value sets the snubber loss (\$ P_ {\text {Rd}}\$)as \$ C_d F V^2\$ . Where V is the pedestal voltage and F is switching frequency. The snubber cap must provide a low impedance at the LC resonance of the parasitics, so it needs to be several times \$ C_j\$.

Some guidelines, and what to expect with RC dampening snubbers:

• For \$ L_ {\text {Lk}}\$ of 500nH and \$ C_j\$ of 32pF, Zo will be 125Ohms. So, \$ R_d\$ would be 125 to match Zo. You may have to fine tune this a little since \$ C_j\$ is non-linear and falls off with reverse voltage.

• Choosing the snubber cap \$ C_d\$ : Choose \$ 3 C_j\leq C_d\leq 10 C_j \$ . Higher values in the range do provide better dampening. For example, \$ C_d\$ of \$ 3 C_j\$ will result in a peak diode voltage of \$ 1.5 n V_ {\text {in}}\$, while \$ C_d\$ of \$ 10 C_j\$ will result in a peak diode voltage of \$ 1.2 n V_ {\text {in}}\$.

• Dissipative snubber performance will not improve for \$ C_d\$ values greater than \$ 10 C_j\$.

Power loss \$ P_ {\text {Rd}}\$, with a pedestal voltage of 1250V and F of 50KHz.

• If \$ C_d\$ is \$ 3 C_j\$ or 100pF, \$ P_ {\text {Rd}}\$ = \$ C_d F V^2\$ or 7.8W.
• If \$ C_d\$ is \$ 10 C_j\$ or 330pF, \$ P_ {\text {Rd}}\$ = \$ C_d F V^2\$ or 25.8W.

\$ C_d\$ of \$ 10 C_j\$ gives the best dampening with peak voltage of 1.2 time the pedestal voltage, but you can save some power with smaller snubbing caps if you can stand the higher peak voltage.

I would suggest starting with a smaller H-bridge project first. The control of MOSFETs seems simple, but there are some subtleties which can easily bite you if you are not careful. When designing a smaller H-bridge project, it's not too hard to protect a circuit in such fashion that even if something goes horribly wrong it won't do much damage (and may very well not do any, though whatever caused the problem will need to be fixed in any case). This is useful not only from the standpoint of reducing the amount of time spent replacing blown components, but also from the standpoint of being able to figure out what happened. If something goes wrong in a 12V 30A H-bridge controller, it's likely to cause enough destruction quickly enough that it will be hard to analyze the pile of cinders and determine what failed first.

Beyond that, the reason companies make H-bridge controllers is that other companies buy them, and the reason that other companies buy them is that a surprising number of discrete components are required to safely and optimally control a MOSFET. If one is trying to control a MOSFET whose Absolute Maximum Vgs is 15 volts, and an inductive transient causes Vgs to reach 30 volts even for a microsecond, the part may easily be destroyed (the voltage required to destroy the part would most likely be around 20 volts, but one shouldn't rely upon it being above 15.01). Keeping Vgs below 15 volts may not sound hard, but factors like parasitic gate-drain capacitance can lead to some unpleasant surprises.