Electronic – Measuring crystal drive strength without a current probe

crystalcurrent measurementmeasurementpowervoltage measurement

TL;DR

Is there a means of measuring the crystal drive level reliably using voltage measurements (even with a differential voltage probe)?


Background:

I am attempting to measure the crystal drive strength in order to ensure that it is not exceeding its rated power of 100uW.

Every application note I have read on the subject says to measure with a current probe and calculate from there.

Measuring crystal drive strength with a current probe

Unfortunately, I don't have a current probe capable of measuring this signal.

Is there any other means of measuring the crystal drive level reliably using voltage measurements (even with a low-capacitance differential voltage probe)?
Coarse accuracy (say 25%) is fine – if I'm not that far below the max drive strength, I would concerns about the design in any case.

For example, would it be valid to measure the voltage across a small "R_Q" (e.g. 1R) on the below diagram? What pit-falls are there in using a method like this?

enter image description here

Best Answer

Next time, I should read those application notes a little more carefully :)

The STM32 Crystal Application Note AN2867 offers an alternate method in Section 3.5.2:

This current can be calculated by measuring the voltage swing at the amplifier input with a low-capacitance oscilloscope probe (no more than 1 pF). The amplifier input current is negligible with respect to the current through C_L1, so we can assume that the current through the crystal is equal to the current flowing through C_L1.

That is, measure the voltage at the non-inverting input to the amplifier (across capacitor C_L1), because the current through the load capacitor is essentially the same as the current through the crystal (since the amplifier is high-impedance).

enter image description here

The drive level can then be estimated as: $$ DL= \frac{ESR \times \left(\pi f C_{tot} \right)^2 \times \left(V_{pp}\right)^2}{2}$$ where $$ C_{tot} = C_{L1} + C_{s}/2 + C_{probe} $$ and ESR is from the crystal, Cs is the board stray capacitance, C_probe is the capacitance of the probe leads, and f is the frequency of operation.

I have not been able to verify this method against the current probe measurement, but it gives sensible values for an NXP S32K development kit (i.e. an 8MHz crystal with a measurement of 0.6Vpp gives a power estimate of 6uW).