Electronic – Vds vs. Rds(on) on 19N10L mosfet

For \$V_{GS}<V_{th}\$, there is weak-inversion current, which varies exponentially with \$V_{GS}\$, as given by

\$I_{D}\approx I_{D0}·e^\dfrac{V_{GS}-V_{th}}{n\frac{kT}{q}}\$

with

\$I_{D0}= I_{D}\$ when \$V_{GS}=V_{th}\$

\$k=\$ Boltzmann constant=\$1.3806488(13)·10^{−23} J·K^{-1}\$

\$T=\$ temperature in kelvins

\$q=\$ charge of a proton=\$1.602176565(35)·10^{−19}\$ C

\$n=\$ slope factor\$=1+\dfrac{C_D}{C_{ox}}\$

\$C_D=\$ capacitance of the depletion layer

\$C_{ox}=\$ capacitance of the oxide layer

You can use either experimental data, or a few points from graphs in the datasheet (like the one that Armandas suggests), to estimate \$I_{D0}\$ and \$n\$, and then use them to estimate \$I_{D}\$ for any \$V_{GS}\$ and \$T\$.

Reference: Modes of operation of a MOSFET.

Added: with my paragraph "You can use either..." I meant that you can do curve fitting to find the values for \$n\$ and \$I_{D0}\$ that best fit the data you have available, either from experiments (if you can do them), or from graphs from the datasheet (if there is any that is useful). In your case, Figure 2 (above), together with the equation above, might allow you extrapolate \$I_D\$ for lower \$V_{GS}\$ values. I'm not saying that you will end up with a high-quality estimate. I'm saying this is the best I could think of.

Look at figure 9 - I've copied it and extended it just to show that both on-resistance numbers are consistent: -

Normally fig 9 goes up to a drain voltage of 2 volts but if you project the lines you will see that at 5V drain voltage the current is about 300 amps and therefore on-resistance is about 17 mohms.

At 80 amps the on resistance is about 3 mohms. Figure 10 is like figure 9 but at 175 degC.