In the schematic builder that calculates voltages/currents/transient analysis that we have been provided for the electrical engineering course, MOSFETs have the parameter "W/L Ratio".
I figured that it was probably Width:Length, but how does that affect the constant K, and the voltage threshold? I realise that there is not enough information for absolute values, but really I'm looking for a formula that relates the variables.
So my question is, what is the relationship between W/L, K, and the threshold voltage of the MOSFET?
Best Answer
The K constant you refer to (more specifically \$K_n\$) is called the conduction parameter of the n-channel device.
\$K_n\$ is given by:
$$K_n = \frac{k_n'}{2}\cdot\frac{W}{L}$$
Where
$$k_n' = \mu_nC_{ox}$$
\$\mu_n\$ is the mobility of the electrons in the inversion layer and \$C_{ox}\$ is the oxide capacitance per unit area. According to Neamen the \$k_n'\$ parameter is called the "process conduction parameter" and is considered to be a constant for a fabrication technology. Therefore the ratio \$\frac{W}{L}\$ is the transistor design variable.
Neamen goes on to say that the design variable is used to design MOSFETS to produce specific current-voltage characteristics in MOSFET circuits.
EDIT:
Yes w refers to width and L to length. It relates to the geometry of the semiconductor.