semiconductors
As we already know that for an intrinsic semiconductor, the relation between recombination rate (r) and intrinsic carrier concentration (n) is given as the following:
$$r = a \cdot n^2$$
where a: recombination coefficient.
My question is will recombination rate (r) increase or decrease or remain same with doping.
1) The mobility versus the electric field behaves like the following graph:
The black line is the effective mobility while the red line is the plot of the universal mobility. This is experimental data, so there might differ from calculations, but the tendencies are the same.
2) Mobility is mainly affected by:
Some books which may help you are:
-Quantum transport: Atom to transistor, S. Datta
-Electronic device architectures for the nano-CMOS era. From ultimate CMOS scaling to beyond CMOS devices, Ferry, Goodnick, and Bird
-Physical properties of semiconductors, C.M. Wolfe
-Semiconductor material and device characterization, D.K. Schroder
-Introduction to solid state physics, C. Kittel
Am i correct considering that semiconductor would remain an intrinsic semiconductor?
Yes you are correct, the semiconductor stays in the intrinsic state.
What will be the changes that will occur?
By applying temperature, some electrons acquire a state of excitement, which causes them to jump to the conduction band from the valence band. This increase of electrons in the conduction band corresponding to a decrease of the resistivity of the material.
Best Answer
Firstly think about intrinsic semiconductor. When thermal equilibrium satisfied excess holes and electrons are equal. $$n=p$$
Think about electrons at the conduction band. They want to recombine with holes to decreases their energy states.
When you add donors to semiconductor now there are more electrons want to recombine with fixed holes. Therefore recombination rate must be larger.
All figures are taken Middle East Technical University EE212 Lecture Notes of Prof Dr Cengiz Beşikçi