Electronic – Determine saturation base current from NPN transistor datasheet (or what resistor do I need to ensure saturation?)

datasheetnpnresistorssaturation

The Fairchild 2N3904 has a long data sheet so let's use that for this exercise. I'm interested in using an NPN in common emitter configuration — it's for switching. It's my understanding that an NPN transistor is in saturation when collector-emitter voltage is equal to \$V_{CE(sat)}\$, which is about 0.25 V here. Say our load is simply a resistor, so I understand how to calculate \$I_{C(sat)}\$. My question is, how do I thence compute \$I_{B(sat)}\$? Do I just use the DC current gain (\$h_{FE}\$)?

Let's suppose for example that my \$I_{C(sat)}\$ = 90 mA. According to the data sheet would a conservative estimate for gain be \$h_{FE}\$ = 30? I say conservative because I want to choose a resistor \$R_B\$ such that my TTL signal is sure to drive the transistor into saturation. That is, my TTL signal will generate \$I_{B(sat)}\$.

Best Answer

Normally the saturation voltage is specified at Ic/Ib = 10, so that's what is guaranteed. Some transistors have it specified at different forced betas. Note that you're not computing it, you are specifying it as part of the design.

If you're not too concerned about how 'turned on' the transistor is, you can use \$h_{FE}\$, which is defined with \$V_{VE}\$ at 1.0Von this datasheet. It's also temperature sensitive so even if you use the minimum number, you should take temperature variations into account. That is not normally what you want to do when you are using the transistor as a switch. You want it turned on well and good, so it doesn't cause a malfunction or damage itself.

It's usually fairly safe to use Ic/Ib = 20 (on a 2N3904, at, say 20mA, or a 2N4401 at 100mA) if you don't mind a slightly higher \$V_{CE}\$ than with Ic/Ib = 10. If you're using a crummier transistor or if you're up near the high end of the current range, or it might get really cold etc. you may have to adjust that rule of thumb.