Does anybody have experience biasing and pulsing a microwave GaN HEMT? I've just ordered a 10 Watt S-band transistor. I know all about bias sequencing. This application is pulsed. I've read about pulsing the drain with a high side switch as well as pulsing by pinching the gate (Microsemi, Triquint, etc. white papers and PhD defences).
Has anyone tried either approaches. In order of importance: (1) rise/fall time, (2) efficiency. I'm concerned about undocumented effects of more than just series resistance with drain pulsing.
I would like real world experiences.