Currently I am working on an H-Bridge. To drive the MOSFETs on the H-Bridge, I have used PWM signals (5V). Voltage supply at MOSFET is 12V.
When I provide 5V PWM to the gate, the MOSFET heats up but if I provide 12V PWM (implemented by using comparator between controller and MOSFET) to the gate, then there is reduction in losses, MOSFET doesn't heat up too much.
My question then is: Will the reduction of the potencial difference between drain and gate result in reduction of switchihg losses or conduction losses? If so, why?