Consequence of uncomplimentary MOSFETs in Hbridge

componentsh-bridgemosfet

I am constructing my own H-Bridge to control a high current motor (24V at 25A), as such I was looking to use high current MOSFETs for each quadrant of the H-bridge. My go too MOSFETs for these applications is the IRF1405 unfortunately the manufacture for these MOSFETs do not offer a complementary P-channel equivalent. What will be the consequences of using a P-channel MOSFET which is not exactly complement to the N-channel MOSFETS in my bridge.
Also does anyone have a suggestion for a complementary MOSFET pair which has similar specifications as the IRF1405? (RDS = 5.3mOhm ID= 169A)

The P-channel replacment I am considering is the IPB120P04P4L.
I have attached an image of my proposed H-Bridge for your reference.

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Best Answer

In my opinion you would need complementary transistors only for more linear/analog applications like in a (audio) power amplifier.

In an H-bridge you're using the MOSFETs as switches, they're either on or off. I would prefer to use FETs with the same Rdson (on resistance) though although as long as Rdson is low enough that might not even matter.

I would also pay attention to the threshold voltage but also here different Vt for NMOS and PMOS would not matter so much if you drive them properly with a large Vgs (which you should to make Rdson low).

So I would just try to find a suitable PMOS that can do the job and not worry about it not being complementary to the NMOS.